Highlights

Studies of two-dimensional electron systems in a strong magnetic field revealed the quantum Hall effect, a topological state of matter featuring a finite Chern number C and chiral edge states. Haldane later theorized that Chern insulators with integer quantum Hall effects could appear in lattice models with complex hopping parameters even at zero magnetic field. Here we report the experimental observation of a correlated Chern insulator in an ABC-trilayer graphene/hexagonal boron nitride (ABC-TLG/hBN) moiré superlattice. We show that reversing the direction of the applied vertical electric field switches the moiré minibands of ABC-TLG/hBN between zero and finite Chern numbers. For topological hole minibands tuned to have a finite Chern number, we focus on quarter filling, corresponding to one hole per moiré unit cell. The Hall resistance is well quantized at h/2e2 (where h is Planck’s constant and e is the charge on the electron), which implies C = 2, for a magnetic field exceeding 0.4 tesla. The correlated Chern insulator is ferromagnetic, exhibiting substantial magnetic hysteresis and a large anomalous Hall signal at zero magnetic field. Our discovery of a C = 2 Chern insulator at zero magnetic field should open up opportunities for discovering correlated topological states, possibly with topological excitations, in nearly flat and topologically nontrivial moiré minibands. [Read the paper]

Pressure alters the physical, chemical, and electronic properties of matter. The diamond anvil cell enables tabletop experiments to investigate a diverse landscape of high-pressure phenomena. Here, we introduce and use a nanoscale sensing platform that integrates nitrogen-vacancy (NV) color centers directly into the culet of diamond anvils. We demonstrate the versatility of this platform by performing diffraction-limited imaging of both stress fields and magnetism as a function of pressure and temperature. We quantify all normal and shear stress components and demonstrate vector magnetic field imaging, enabling measurement of the pressure-driven α↔ϵα↔ϵ phase transition in iron and the complex pressure-temperature phase diagram of gadolinium. A complementary NV-sensing modality using noise spectroscopy enables the characterization of phase transitions even in the absence of static magnetic signatures. [Read the paper]

Advances in controlling the correlated behaviour of transition metal dichalcogenides have opened a new frontier of many-body physics in two dimensions. A field where these materials have yet to make a deep impact is antiferromagnetic spintronics—a relatively new research direction promising technologies with fast switching times, insensitivity to magnetic perturbations and reduced cross-talk. Here, we present measurements on the intercalated transition metal dichalcogenide Fe1/3NbS2 that exhibits antiferromagnetic ordering below 42 K. We find that remarkably low current densities of the order of 104 A cm−2 can reorient the magnetic order, which can be detected through changes in the sample resistance, demonstrating its use as an electronically accessible antiferromagnetic switch. Fe1/3NbS2 is part of a larger family of magnetically intercalated transition metal dichalcogenides, some of which may exhibit switching at room temperature, forming a platform from which to build tuneable antiferromagnetic spintronic device. [Read the paper]

Spin ensembles of nitrogen vacancy (NV) centers in diamond are emerging as powerful spin-based sensors for magnetic, electric and thermal field imaging with high spatial and temporal resolution. Here we characterize the formation of depth-confined NV center ensembles, activated by electron irradiation in diamond layers grown by plasma enhanced chemical vapor deposition with nitrogen co-doping. To do so, we exploit the high magnetic sensitivity of ensembles of NV centers to probe their spin environment as a function of growth and irradiation parameters. We engineer an NV ensemble whose magnetic sensitivity is within a factor of two of the static NV-NV dipolar interaction limit, thus demonstrating a powerful platform for quantum sensing. [Read the paper]

Understanding the mechanism of high-transition-temperature (high-Tc) superconductivity is a central problem in condensed matter physics. It is often speculated that high-Tc superconductivity arises in a doped Mott insulator as described by the Hubbard model. An exact solution of the Hubbard model, however, is extremely challenging owing to the strong electron–electron correlation in Mott insulators. Therefore, it is highly desirable to study a tunable Hubbard system, in which systematic investigations of the unconventional superconductivity and its evolution with the Hubbard parameters can deepen our understanding of the Hubbard model. Here we report signatures of tunable superconductivity in an ABC-trilayer graphene (TLG) and hexagonal boron nitride (hBN) moiré superlattice. Unlike in ‘magic angle’ twisted bilayer graphene, theoretical calculations show that under a vertical displacement field, the ABC-TLG/hBN heterostructure features an isolated flat valence miniband associated with a Hubbard model on a triangular superlattice where the bandwidth can be tuned continuously with the vertical displacement field. Upon applying such a displacement field we find experimentally that the ABC-TLG/hBN superlattice displays Mott insulating states below 20 kelvin at one-quarter and one-half fillings of the states, corresponding to one and two holes per unit cell, respectively. Upon further cooling, signatures of superconductivity (‘domes’) emerge below 1 kelvin for the electron- and hole-doped sides of the one-quarter-filling Mott state. The electronic behaviour in the ABC-TLG/hBN superlattice is expected to depend sensitively on the interplay between the electron–electron interaction and the miniband bandwidth. By varying the vertical displacement field, we demonstrate transitions from the candidate superconductor to Mott insulator and metallic phases. Our study shows that ABC-TLG/hBN heterostructures offer attractive model systems in which to explore rich correlated behaviour emerging in the tunable triangular Hubbard model. [Read the paper]

Characterizing the local internal environment surrounding solid-state spin defects is crucial to harnessing them as nanoscale sensors of external fields. This is especially germane to the case of defect ensembles which can exhibit a complex interplay between interactions, internal fields, and lattice strain. Working with the nitrogen-vacancy (NV) center in diamond, we demonstrate that local electric fields dominate the magnetic resonance behavior of NV ensembles at a low magnetic field. We introduce a simple microscopic model that quantitatively captures the observed spectra for samples with NV concentrations spanning more than two orders of magnitude. Motivated by this understanding, we propose and implement a novel method for the nanoscale localization of individual charges within the diamond lattice; our approach relies upon the fact that the charge induces a NV dark state which depends on the electric field orientation. [Read the paper]